Novel 700 V high-voltage SO1 LDMOS structure with folded drift region

A new high-voltage LDMOS with folded drift region （FDR LDMOS） is proposed. The drift region is folded by introducing the interdigital oxide layer in the： Si active layer, the result of which is that the effective length of the drift region is increased significantly. The breakdown characteristic has...

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Bibliographic Details
Published in半导体学报：英文版 no. 2; pp. 87 - 91
Main Author 李琦 李海鸥 翟江辉 唐宁
Format Journal Article
LanguageEnglish
Published 2015
Subjects
LDMOS
击穿特性
屏蔽效果
折叠
有效长度
漂移区
结构
高压
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Summary:A new high-voltage LDMOS with folded drift region （FDR LDMOS） is proposed. The drift region is folded by introducing the interdigital oxide layer in the： Si active layer, the result of which is that the effective length of the drift region is increased significantly. The breakdown characteristic has been improved by the shielding effect of the electric field from the holes accumulated in the surface of the device and the buried oxide layer. The numerical results indicate that the breakdown voltage of 700 V is obtained in the proposed device in comparison to 300 V of conventional LDMOS, while maintaining low on-resistance.
Bibliography:folded drift region; breakdown voltage; interdigital oxide layer; electric field modulation
Li Qi,Li Haiou,Zhai Jianghui,Tang Ning
11-5781/TN
A new high-voltage LDMOS with folded drift region （FDR LDMOS） is proposed. The drift region is folded by introducing the interdigital oxide layer in the： Si active layer, the result of which is that the effective length of the drift region is increased significantly. The breakdown characteristic has been improved by the shielding effect of the electric field from the holes accumulated in the surface of the device and the buried oxide layer. The numerical results indicate that the breakdown voltage of 700 V is obtained in the proposed device in comparison to 300 V of conventional LDMOS, while maintaining low on-resistance.
ISSN:1674-4926