Junction-Temperature Measurement in InAs/InP（100） Quantum-Dot Lasers

We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature ri...

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Bibliographic Details
Published in中国物理快报：英文版 no. 1; pp. 75 - 78
Main Author LI Shi-Guo GONG Qian CAO Chun-Fang WANG Xin-Zhong YAN Jin-Yi WANG Hai-Long
Format Journal Article
LanguageEnglish
Published 2015
Subjects
InAs
波长范围
温度感应
温度测量
磷化铟
结点
量子点激光器
量子阱激光器
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Summary:We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature rise is measured for the quantum-dot （QD） laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3℃. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.
Bibliography:We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature rise is measured for the quantum-dot （QD） laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3℃. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.
11-1959/O4
ISSN:0256-307X
1741-3540