Improved performance of AlGaN/GaN HEMT by N_2O plasma pre-treatment

The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor（HEMT） prepared by using a plasma-enhanced chemical vapor deposition（PECVD） system is presented.After the plasma treatment,the peak transconductance（gm） increases from 209 mS/mm to...

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Published in中国物理B：英文版 no. 2; pp. 382 - 386
Main Author 宓珉瀚 张凯 赵胜雷 王冲 张进成 马晓华 郝跃
Format Journal Article
LanguageEnglish
Published 2015
Subjects
AlGaN
HEMT
氮等离子体
等离子体增强化学气相沉积
等离子体处理
等离子预处理
装置改进
高电子迁移率晶体管
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Summary:The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor（HEMT） prepared by using a plasma-enhanced chemical vapor deposition（PECVD） system is presented.After the plasma treatment,the peak transconductance（gm） increases from 209 mS/mm to 293 mS/mm.Moreover,it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device.From the analysis of frequency-dependent conductance,it can be seen that the trap state density（DT） and time constant（τT） of the N20-treated device are smaller than those of a non-treated device.The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.
Bibliography:Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, and Hao Yue（ Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics, Xidian University, Xi＇ an 710071, China）
11-5639/O4
The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor（HEMT） prepared by using a plasma-enhanced chemical vapor deposition（PECVD） system is presented.After the plasma treatment,the peak transconductance（gm） increases from 209 mS/mm to 293 mS/mm.Moreover,it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device.From the analysis of frequency-dependent conductance,it can be seen that the trap state density（DT） and time constant（τT） of the N20-treated device are smaller than those of a non-treated device.The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.
GaN-based HEMTs, N2O plasma pre-pretreatment, frequency-dependent conductance
ISSN:1674-1056
2058-3834