磷锗锌晶体生长与缺陷结构

采用水平双温区法批量合成了高纯ZnGeP2多晶,并用垂直Bridgman法生长出直径为40～50mm的高品质单晶。采用密度泛函理论分析了ZnGeP2晶体中可能存在的点缺陷对其近红外波段透光性的影响,认为V-Zn和Zn0Ge缺陷的影响最大。利用X射线衍射形貌术对晶体中存在的位错、层错、孪晶界、包裹体等微缺陷进行了分析,结果表明,温度场稳定性和固液生长界面形态是缺陷形成的主要因素。...

Full description

Saved in:
Bibliographic Details
Published in硅酸盐学报 Vol. 42; no. 8; pp. 1082 - 1086
Main Author 雷作涛 朱崇强 宋梁成 杨春晖 谷立山
Format Journal Article
LanguageChinese
Published 2014
Subjects
吸收光谱
垂直Bridgman法
磷锗锌晶体
缺陷结构
Online AccessGet full text

Cover

More Information
Summary:采用水平双温区法批量合成了高纯ZnGeP2多晶,并用垂直Bridgman法生长出直径为40～50mm的高品质单晶。采用密度泛函理论分析了ZnGeP2晶体中可能存在的点缺陷对其近红外波段透光性的影响,认为V-Zn和Zn0Ge缺陷的影响最大。利用X射线衍射形貌术对晶体中存在的位错、层错、孪晶界、包裹体等微缺陷进行了分析,结果表明,温度场稳定性和固液生长界面形态是缺陷形成的主要因素。
Bibliography:germanium zinc phosphide crystal; defect; vertical Bridgman technique; absorption spectra
11-2310/TQ
LEI Zuotao , ZHU Chongqiang , SONG Liangcheng , YANG Chunhui , GU Lishan （1. School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China; 2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China）
A high-purity ZnGeP2 polycrystalline material was synthesized by two-temperature zone technique. The single crys- tals with the diameter of 40-50 mm were grown by a vertical Bridgman technique. The possible point defects in the ZnGeP2 crystal and its influence to the near-infrared light transmittance of crystal were investigated via the density functional theory calculation. The results showed that V~ defects gave the greater optical losses than other point defects. According to the anal- ysis by X-ray diffraction topography, there exist the microdefects, i. e. , dislocation, stacking fault, twin boundary, inclusion, etc. It
ISSN:0454-5648