Ferroelectricity in hexagonal YFeO_3 film at room temperature

In this paper we report the leakage current, ferroelectric and piezoelectric properties of the YFe O3 film with hexagonal structure, which was fabricated on Si（111） substrate by a simple sol-gel method. The leakage current test shows good characteristics as the leakage current density is 5.4 × 10^-6...

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Bibliographic Details
Published in中国物理B：英文版 no. 1; pp. 498 - 502
Main Author 张润兰 陈长乐 张云婕 邢辉 董祥雷 金克新
Format Journal Article
LanguageEnglish
Published 2015
Subjects
六方结构
压电性能
室温
漏电流密度
电流测试
硅（111）
空间电荷
膜
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ISSN1674-1056
2058-3834

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Summary:In this paper we report the leakage current, ferroelectric and piezoelectric properties of the YFe O3 film with hexagonal structure, which was fabricated on Si（111） substrate by a simple sol-gel method. The leakage current test shows good characteristics as the leakage current density is 5.4 × 10^-6A/cm^2 under 5 V. The dominant leakage mechanism is found to be an Ohmic behavior at low electric field and space-charge-limited conduction at high electric field region. The P–E measurements show ferroelectric hysteresis loops with small remnant polarization and coercive field at room temperature.The distinct and switchable domain structures on the nanometer scale are observed by piezoresponse force microscopy,which testifies to the ferroelectricity of the YFe O3 film further.
Bibliography:Zhang Run-Lan,Chen Chang-Le,Zhang Yun-Jie,Xing Hui,Dong Xiang-Lei,Jin Ke-Xin（ 1. Shaanxi Key Laboratory of Condensed Matter Structures and Properties, Northwestern Polytechnical University, Xi＇an 710072, China ;2. College of Chemistry and Chemical Engineering, Xi＇ an University of Science and Technology, Xi＇ an 710054, China）
hexagonal YFe O3; multiferroic; ferroelectricity; piezoresponse force microscopy
11-5639/O4
In this paper we report the leakage current, ferroelectric and piezoelectric properties of the YFe O3 film with hexagonal structure, which was fabricated on Si（111） substrate by a simple sol-gel method. The leakage current test shows good characteristics as the leakage current density is 5.4 × 10^-6A/cm^2 under 5 V. The dominant leakage mechanism is found to be an Ohmic behavior at low electric field and space-charge-limited conduction at high electric field region. The P–E measurements show ferroelectric hysteresis loops with small remnant polarization and coercive field at room temperature.The distinct and switchable domain structures on the nanometer scale are observed by piezoresponse force microscopy,which testifies to the ferroelectricity of the YFe O3 film further.
ISSN:1674-1056
2058-3834