High power single mode 980 nm AIGalnAs/AIGaAs quantum well lasers with a very low threshold current

To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure （GRIN-SCH） A1GaInAs/A1GaAs quantum well laser with an optimized ridge wave- guide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was ach...

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Bibliographic Details
Published in半导体学报：英文版 no. 11; pp. 70 - 73
Main Author 董振 王翠鸾 井红旗 刘素平 马骁宇
Format Journal Article
LanguageEnglish
Published 2013
Subjects
低阈值电流
分别限制异质结构
单模
器具
梯度折射率
输出功率
量子阱激光器
高功率
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ISSN1674-4926

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Summary:To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure （GRIN-SCH） A1GaInAs/A1GaAs quantum well laser with an optimized ridge wave- guide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.
Bibliography:semiconductor laser; low threshold; ridge waveguide; single mode
Dong Zhen, Wang Cuiluan, Jing Hongqi, Liu Suping,Ma Xiaoyu（National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
11-5781/TN
To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure （GRIN-SCH） A1GaInAs/A1GaAs quantum well laser with an optimized ridge wave- guide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.
ISSN:1674-4926