Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad

Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR...

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Bibliographic Details
Published in半导体学报：英文版 no. 7; pp. 170 - 174
Main Author 何敖东 刘波 宋志棠 吕业刚 李俊焘 刘卫丽 封松林 吴关平
Format Journal Article
LanguageEnglish
Published 2013
Subjects
CMP
REG
化学反应
化学机械平坦化
焊盘
表面形貌
表面质量
酸性料浆
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Summary:Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.
Bibliography:He Aodong, Liu Bo, Song Zhitang,Lu Yegang,Li Juntao, Liu Weili,Feng Songlin and Wu Guanping（1 Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2University of Chinese Academy of Sciences, Beijing 100049, China 3 Semiconductor Manufacturing International Corporation, Shanghai 201203, China）
porosity; soft pad; chemical mechanical planarization; Ge2Sb2Te5
Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.
11-5781/TN
ISSN:1674-4926