Inter valley phonon scattering mechanism in strained Si/（101）Si_（1-x）Ge_x

Inter valley scattering has a great impact on carrier mobility of strained Si materials,so based on Fermi＇s golden rule and the theory of Boltzmann collision term approximation,inter valley phonon scattering mechanism of electrons in nano scale strained Si（101） materials is established under the inf...

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Bibliographic Details
Published in半导体学报：英文版 no. 7; pp. 7 - 10
Main Author 靳钊 乔丽萍 刘策 郭晨 刘立东 王江安
Format Journal Article
LanguageEnglish
Published 2013
Subjects
声子
山谷
应变硅
散射机制
纳米尺度
载流子迁移率
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Summary:Inter valley scattering has a great impact on carrier mobility of strained Si materials,so based on Fermi＇s golden rule and the theory of Boltzmann collision term approximation,inter valley phonon scattering mechanism of electrons in nano scale strained Si（101） materials is established under the influence of both energy and stress. It shows that inter valley phonon f_2,f_3,g_3 scattering rates decrease markedly in nano scale strained Si（101） materials with increasing stress.The quantized models can provide valuable references to the understanding of strained Si materials and the research on electron carrier mobility.
Bibliography:Jin Zhao, Qiao Llplng, Liu Ce, Guo Chen,Liu Lldong , and Wang Jiang＇an（1 School of Information Engineering, Chang＇an University, Xi＇an 710064, China 2 School of Information Engineering, Tibet University for Nationalities, Xianyang 712082, China）
11-5781/TN
inter valley scattering; strained Si; model
Inter valley scattering has a great impact on carrier mobility of strained Si materials,so based on Fermi＇s golden rule and the theory of Boltzmann collision term approximation,inter valley phonon scattering mechanism of electrons in nano scale strained Si（101） materials is established under the influence of both energy and stress. It shows that inter valley phonon f_2,f_3,g_3 scattering rates decrease markedly in nano scale strained Si（101） materials with increasing stress.The quantized models can provide valuable references to the understanding of strained Si materials and the research on electron carrier mobility.
ISSN:1674-4926