Longitudinal, transverse, density-of-states, and conductivity masses of electrons in （001）, （101） and （111） biaxiallystrained-Si and strained-Si1？xGex

In this study, the electron effective masses, including longitudinal, transverse, density-of-states and conductivity effective masses, have been systematically investigated in （001）, （101） and （111） biaxially strained Si and Si1-xGex. It is found that the effect of strain on the longitudinal and tra...

Full description

Saved in:
Bibliographic Details
Published in中国科学：物理学、力学、天文学英文版 Vol. 55; no. 11; pp. 2033 - 2037
Main Author SONG JianJun YANG Chao ZHANG HeMing HU HuiYong ZHOU ChunYu WANG Bin
Format Journal Article
LanguageEnglish
Published 2012
Subjects
bia
密度状态
应变硅
有效质量
材料物理
电子
电导率
虚拟
Online AccessGet full text

Cover

More Information
Summary:In this study, the electron effective masses, including longitudinal, transverse, density-of-states and conductivity effective masses, have been systematically investigated in （001）, （101） and （111） biaxially strained Si and Si1-xGex. It is found that the effect of strain on the longitudinal and transverse masses can be neglected, that the density-of-states masses in （001） and （110） biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction （x）, and that the conductivity masses along typical orientations in （001） and （110） strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.
Bibliography:11-5000/N
strained Si ; strained Si1-xGex ; effective mass; electron
In this study, the electron effective masses, including longitudinal, transverse, density-of-states and conductivity effective masses, have been systematically investigated in （001）, （101） and （111） biaxially strained Si and Si1-xGex. It is found that the effect of strain on the longitudinal and transverse masses can be neglected, that the density-of-states masses in （001） and （110） biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction （x）, and that the conductivity masses along typical orientations in （001） and （110） strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.
SONG JianJun, YANG Chao, ZHANG HeMing, HU HuiYong, ZHOU ChunYu, WANG Bin （Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China ）
ISSN:1674-7348
1869-1927