Preparation of γ-Gd2S3 via thermolysis of Gd[S2CN（C4Hs）]a-phen coordination

Pure γ-Gd2S3 was synthesized by the thermolysis of a single Gd[S2CN（C4H8）]3 phen complex precursor in a flow of argon carrier gas containing sulfur vapor. The complex precursor was decomposed into amorphous Gd2S3 and carbon at about 350 ℃. Crystalline y-Gd2S3 could be achieved at temperature exceedi...

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Published in中国稀土学报：英文版 Vol. 30; no. 8; pp. 802 - 806
Main Author 罗昔贤 马禄彬 邢明铭 付姚 孙敏 庞涛
Format Journal Article
LanguageEnglish
Published 2012
Subjects
CS2
原位形成
挥发性
结晶度
络合物
调准
过热
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ISSN1002-0721
2509-4963

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Summary:Pure γ-Gd2S3 was synthesized by the thermolysis of a single Gd[S2CN（C4H8）]3 phen complex precursor in a flow of argon carrier gas containing sulfur vapor. The complex precursor was decomposed into amorphous Gd2S3 and carbon at about 350 ℃. Crystalline y-Gd2S3 could be achieved at temperature exceeding 600 ℃, and the obtained γ-Gd2S3 presented a very high degree of crystallinity at 800 ℃. Carbon prevented the formation of Gd2O2S impurity in the preparation of y-Gd2S3. However, the carbon blackened the product. At temperature ≥ 1000 ℃, the residual carbon impurity could be efficiently removed by introducing sulfur into the system for the volatile CS2 could be formed in situ via the reaction of sulfur with the deposited carbon. In the meantime, S also promoted the crystallization of γ-Gd2S3 remarkablely.
Bibliography:Pure γ-Gd2S3 was synthesized by the thermolysis of a single Gd[S2CN（C4H8）]3 phen complex precursor in a flow of argon carrier gas containing sulfur vapor. The complex precursor was decomposed into amorphous Gd2S3 and carbon at about 350 ℃. Crystalline y-Gd2S3 could be achieved at temperature exceeding 600 ℃, and the obtained γ-Gd2S3 presented a very high degree of crystallinity at 800 ℃. Carbon prevented the formation of Gd2O2S impurity in the preparation of y-Gd2S3. However, the carbon blackened the product. At temperature ≥ 1000 ℃, the residual carbon impurity could be efficiently removed by introducing sulfur into the system for the volatile CS2 could be formed in situ via the reaction of sulfur with the deposited carbon. In the meantime, S also promoted the crystallization of γ-Gd2S3 remarkablely.
11-2788/TF
thermolysis; rare earth sesquisulfides; γ-Gd2S3; single source precursor
ISSN:1002-0721
2509-4963