Amplified spontaneous emission from metal-backed po ly[2- m e t hoxy-5- （ 2 ＇-et hylhexyloxy）- 1, 4-phenylenevinylene] film

We investigate the amplified spontaneous emission （ASE） from an Ag-backed poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） film with different film thicknesses. The ASE characteristics of Ag-backed MEH- PPV films with different thicknesses show that increasing the film thickness...

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Bibliographic Details
Published in中国物理：英文版 Vol. 20; no. 7; pp. 9 - 12
Main Author 张波 侯延冰 滕枫 娄志东 刘小君 胡兵 武文彬
Format Journal Article
LanguageEnglish
Published 2011
Subjects
MEH
PPV
固态激光器
放大的自发辐射
放大自发辐射
电影胶片
苯乙烯
金属设备
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Summary:We investigate the amplified spontaneous emission （ASE） from an Ag-backed poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） film with different film thicknesses. The ASE characteristics of Ag-backed MEH- PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.
Bibliography:Zhang Bo, Hou Yan-Bing, Liu Xiao-Jun, Hu Bing Teng Feng, Lou Zhi-Dong, Wu Wen-Bin Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
11-5639/O4
We investigate the amplified spontaneous emission （ASE） from an Ag-backed poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） film with different film thicknesses. The ASE characteristics of Ag-backed MEH- PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.
polymer semiconductor, amplified spontaneous emission, metal-backed film
ISSN:1674-1056
2058-3834