一种新的补偿硅电阻率／掺杂浓度模型
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| Published in | 中国有色金属学报：英文版 Vol. 21; no. 5; pp. 1172 - 1177 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2011
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| Subjects | |
| Online Access | Get full text |
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| Author | Dominic LEBLANC Karol PUTYERA |
|---|---|
| AuthorAffiliation | Becancour Silicon Inc., Becancour G9H 2V8, Canada Evans Analytical Group, Syracuse, NY 13211, USA |
| Author_xml | – sequence: 1 fullname: Dominic LEBLANC Karol PUTYERA |
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| Discipline | Engineering |
| DocumentTitleAlternate | New resistivity/dopant density model for compensated-Si |
| EndPage | 1177 |
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| Notes | silicon; resistivity; compensated; UMG; boron; phosphorus Models establishing relationships between electrical resistivity and dopant densities of silicon wafers/bricks are not applicable for compensated-Si, such as upgraded metallurgical grade silicon UMG-Si. To date, no satisfactory theoretical model has been able to explain precisely the variety of new experimental results and observations related to compensated-Si. In this study, a new approach considering equilibrium ionisation constants according to electrolyte theory was proposed, which reproduce, for single-doped Si, Thurber＇s curves of charge carrier＇s mobilities. When more than one doping species are involved, as in compensated-Si, a numerical algorithm has to be used for solving multiple equilibrium systems. The study of such systems demonstrates a particular behaviour known from buffered solutions. Equilibrium constants were calculated from thermodynamic properties of chemical compounds, and a new general theory was proposed using available knowledge of electrochemistry （Nernst equation, Butler-Volmer equation）. Considering that the silicon/dopant systems constitute a weak electrolyte solid solution, it is concluded that the electrolyte solution theory provides a good physical model and mathematical framework to get a better understanding of solar cell＇s behaviour. 43-1239/TG Dominic LEBLANC, Karol PUTYERA（1. Becancour Silicon Inc., Becancour G9H 2V8, Canada; 2. Evans Analytical Group, Syracuse, NY 13211, USA） |
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| PublicationDate | 2011 |
| PublicationDateYYYYMMDD | 2011-01-01 |
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| PublicationDecade | 2010 |
| PublicationTitle | 中国有色金属学报：英文版 |
| PublicationTitleAlternate | Transactions of Nonferrous Metals Society of China |
| PublicationYear | 2011 |
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| Score | 3.7946327 |
| SourceID | chongqing |
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| StartPage | 1172 |
| SubjectTerms | UMG 电阻率 硅 硼 磷 补偿 |
| Title | 一种新的补偿硅电阻率／掺杂浓度模型 |
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