一种新的补偿硅电阻率／掺杂浓度模型

Saved in:
Bibliographic Details
Published in中国有色金属学报：英文版 Vol. 21; no. 5; pp. 1172 - 1177
Main Author Dominic LEBLANC Karol PUTYERA
Format Journal Article
LanguageEnglish
Published 2011
Subjects
UMG
电阻率
硅
硼
磷
补偿
Online AccessGet full text

Cover

More Information
Bibliography:silicon; resistivity; compensated; UMG; boron; phosphorus
Models establishing relationships between electrical resistivity and dopant densities of silicon wafers/bricks are not applicable for compensated-Si, such as upgraded metallurgical grade silicon UMG-Si. To date, no satisfactory theoretical model has been able to explain precisely the variety of new experimental results and observations related to compensated-Si. In this study, a new approach considering equilibrium ionisation constants according to electrolyte theory was proposed, which reproduce, for single-doped Si, Thurber＇s curves of charge carrier＇s mobilities. When more than one doping species are involved, as in compensated-Si, a numerical algorithm has to be used for solving multiple equilibrium systems. The study of such systems demonstrates a particular behaviour known from buffered solutions. Equilibrium constants were calculated from thermodynamic properties of chemical compounds, and a new general theory was proposed using available knowledge of electrochemistry （Nernst equation, Butler-Volmer equation）. Considering that the silicon/dopant systems constitute a weak electrolyte solid solution, it is concluded that the electrolyte solution theory provides a good physical model and mathematical framework to get a better understanding of solar cell＇s behaviour.
43-1239/TG
Dominic LEBLANC, Karol PUTYERA（1. Becancour Silicon Inc., Becancour G9H 2V8, Canada; 2. Evans Analytical Group, Syracuse, NY 13211, USA）
ISSN:1003-6326