A combinatorial approach of developing alloy thin films using co-sputtering technique for displays
In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying comp...
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Published in | 中国科学:技术科学英文版 no. 1; pp. 79 - 87 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
2009
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Subjects | |
Online Access | Get full text |
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Summary: | In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95―2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350℃, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satis- factory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of Al-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets. |
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Bibliography: | Jaydeep SARKAR1, Tien-Heng HUANG2, Lih-Ping WANG2, Peter H. McDONALD1, Chi-Fung LO1 & Paul S. GILMAN1 1 Praxair Electronics, 560 Route 303, Orangeburg, NY 10962, USA; 2 Materials and Chemical Research Laboratories, Photovoltaic Technology Center, Industrial Technology Research Institute (ITRI), Hsinchu 31040, China 11-5845/TH |
ISSN: | 1674-7321 1869-1900 |