InP-based InGaAs/InA1GaAs digital alloy quantum well laser structure at 2μm

The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/Ino.53Ga0.47As digital alloy triangular well layers and tensile Ino.53Ga0.47As/InAiGaAs digital alloy barrier lay...

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Bibliographic Details
Published inChinese physics B no. 7; pp. 518 - 523
Main Author 顾溢 王凯 李耀耀 李成 张永刚
Format Journal Article
LanguageEnglish
Published 2010
Subjects
InGaAs
InP基
光学特性
分子束外延生长
合金层
激光器结构
透射电子显微镜
量子阱
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ISSN1674-1056
2058-3834

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Summary:The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/Ino.53Ga0.47As digital alloy triangular well layers and tensile Ino.53Ga0.47As/InAiGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photo- luminescence （PL） and electroluminescence （EL） measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1μm at 300 K and an EL signal of around 1.95μm at 100 K have been obtained.
Bibliography:TN243
11-5639/O4
InP-based, digital alloy, lasers, strained materials
TN305
ISSN:1674-1056
2058-3834