Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis

A wide-dynamic-range CMOS image sensor(CIS) based on synthesis of a long-time and a short-time exposure signal in the floating diffusion(FD) of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prot...

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Bibliographic Details
Published inJournal of semiconductors no. 5; pp. 73 - 77
Main Author 李斌桥 孙忠岩 徐江涛
Format Journal Article
LanguageChinese
Published 2010
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Summary:A wide-dynamic-range CMOS image sensor(CIS) based on synthesis of a long-time and a short-time exposure signal in the floating diffusion(FD) of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18μm CIS process.With the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second(fps).The proposed CMOS image sensor meets the demands of applications in security surveillance systems.
Bibliography:CMOS image sensor; double exposure; dynamic range; five-transistor active pixel
five-transistor active pixel
TP212
dynamic range
CMOS image sensor
11-5781/TN
TP274.2
double exposure
ISSN:1674-4926