Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis
A wide-dynamic-range CMOS image sensor(CIS) based on synthesis of a long-time and a short-time exposure signal in the floating diffusion(FD) of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prot...
Saved in:
Published in | Journal of semiconductors no. 5; pp. 73 - 77 |
---|---|
Main Author | |
Format | Journal Article |
Language | Chinese |
Published |
2010
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A wide-dynamic-range CMOS image sensor(CIS) based on synthesis of a long-time and a short-time exposure signal in the floating diffusion(FD) of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18μm CIS process.With the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second(fps).The proposed CMOS image sensor meets the demands of applications in security surveillance systems. |
---|---|
Bibliography: | CMOS image sensor; double exposure; dynamic range; five-transistor active pixel five-transistor active pixel TP212 dynamic range CMOS image sensor 11-5781/TN TP274.2 double exposure |
ISSN: | 1674-4926 |