High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

• Published in: Journal of semiconductors no. 2; pp. 33 - 37
• Main Author: 吴家松 林泰勇 吴宪明
• Format: Journal Article
• Language: Chinese
• Published: 2010
• Subjects: GHz; MMIC; 共面波导; 功率放大器; 微波单片集成电路; 线性化电路; 结构技术; 高线性度
• ISSN: 1674-4926

A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit（MMIC）,which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier（PA） was studied taking into account the linearizer circuit and the coplanar waveguide（CPW） structures.Based on these technologies,the power amplifier,which has a chip size of 1.44×1.10 mm~2,obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region.An input third-order intercept point （IIP3） of-3 dBm,an output third-order intercept point（OIP3） of 21.1 dBm and a power added efficiency（PAE） of 22% were attained,respectively.Finally,the overall power characterization exhibited high gain and high linearity,which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics.This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz.