A Ka-band low-noise amplifier with a coplanar waveguide （CPW） structure with 0.15-/~m GaAs pHEMT technology

• Published in: Journal of semiconductors no. 1; pp. 69 - 72
• Main Author: 吴家松 张建煌 刘兴中 林泰勇 吴宪明
• Format: Journal Article
• Language: Chinese
• Published: 2010
• Subjects: CPW; GaAs; Ka波段; PHEMT; 低噪声放大器; 共面波导; 技术制造; 波导结构
• ISSN: 1674-4926

This investigation explores a low-noise amplifier （LNA） with a coplanar waveguide （CPW） structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15μm GaAs pseudomorphic high electron mobility transistor （pHEMT） technology in a Ka-band （26.540.0 GHz） microwave monolithic integrated circuit （MMIC）. The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dt3 at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a Vds of 2 V and a Vgs of-0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.