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Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The r...

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Bibliographic Details
Main Authors	Jungwirth, T, Smrcka, L
Format	Journal Article
Language	English
Published	11.01.1995
Subjects	Physics - Disordered Systems and Neural Networks Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Physics - Other Condensed Matter Physics - Quantum Gases Physics - Soft Condensed Matter Physics - Statistical Mechanics Physics - Strongly Correlated Electrons Physics - Superconductivity
Online Access	Get full text
DOI	10.48550/arxiv.cond-mat/9501041

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Summary:	A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.
Bibliography:	JS-95-01
DOI:	10.48550/arxiv.cond-mat/9501041