Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The r...

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Bibliographic Details
Main Authors Jungwirth, T, Smrcka, L
Format Journal Article
LanguageEnglish
Published 11.01.1995
Subjects
Physics - Disordered Systems and Neural Networks
Physics - Materials Science
Physics - Mesoscale and Nanoscale Physics
Physics - Other Condensed Matter
Physics - Quantum Gases
Physics - Soft Condensed Matter
Physics - Statistical Mechanics
Physics - Strongly Correlated Electrons
Physics - Superconductivity
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DOI10.48550/arxiv.cond-mat/9501041

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Summary:A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.
Bibliography:JS-95-01
DOI:10.48550/arxiv.cond-mat/9501041