Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

Nature Physics Volume: 3 Issue: 8 Pages: 573-578 (2007) Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in whi...

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Bibliographic Details
Main Authors Pappert, K, Hümpfner, S, Gould, C, Wenisch, J, Brunner, K, Schmidt, G, Molenkamp, L. W
Format Journal Article
LanguageEnglish
Published 19.01.2007
Subjects
Physics - Mesoscale and Nanoscale Physics
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Summary:Nature Physics Volume: 3 Issue: 8 Pages: 573-578 (2007) Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.
DOI:10.48550/arxiv.cond-mat/0701478