Mechanism of Enhanced Rectification in Unimolecular Borromean Ring Devices

G. D. Scott, K. S. Chichak, A. J. Peters, S. J. Cantrill, J. F. Stoddart, and H. W. Jiang, Phys. Rev. B, 74, 113404 (2006) We have studied charge transport through individual Borromean Ring complexes, both with and without anchor groups, in gated double barrier tunneling junctions (DBTJs) formed usi...

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Main Authors Scott, G. D, Chichak, K. S, Peters, A. J, Cantrill, S. J, Stoddart, J. F, Jiang, H. W
Format Journal Article
LanguageEnglish
Published 06.11.2006
Subjects
Physics - Mesoscale and Nanoscale Physics
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Summary:G. D. Scott, K. S. Chichak, A. J. Peters, S. J. Cantrill, J. F. Stoddart, and H. W. Jiang, Phys. Rev. B, 74, 113404 (2006) We have studied charge transport through individual Borromean Ring complexes, both with and without anchor groups, in gated double barrier tunneling junctions (DBTJs) formed using the electrical breakjunction technique on gold nanowires. While common single molecule device characteristics can be observed with either form of the Borromean Rings, the complexes with anchor groups show strong rectification of conduction in a relatively high percentage of samples. We present our data along with a simple model underlining the mechanism by which the arrangement and composition of the weakly bonding anchor groups attached to the electroactive element may promote a device configuration resulting in rectification.
DOI:10.48550/arxiv.cond-mat/0611161