Interlayer exchange coupling in (Ga,Mn)As based multilayers

phys. stat. sol. (c) 3, No. 12, 4070-4073 (2006) Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-fie...

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Bibliographic Details
Main Authors Giddings, A. D, Jungwirth, T, Gallagher, B. L
Format Journal Article
LanguageEnglish
Published 25.10.2006
Subjects
Physics - Materials Science
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Summary:phys. stat. sol. (c) 3, No. 12, 4070-4073 (2006) Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.
DOI:10.48550/arxiv.cond-mat/0610696