Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect
The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 10...
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Main Authors | , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
14.09.2006
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Subjects | |
Online Access | Get full text |
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Summary: | The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have
been studied by Shubnikov-de Haas measurement. Two subbands of the
two-dimensional electron gas in the hetero-interface were populated. After the
low temperature illumination, the electron density increases from 11.99 x 1012
cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to
0.94 x 1012 cm-2 for the second subband. The persistent photoconductivity
effect (~13% increase) is mostly attributed to the Fe-related deep-donor level
in GaN layer. The second subband starts to populate when the first subband is
filled at a density n1 = 9.40 x 1012 cm-2. We calculate the energy separation
between the first and second subbands to be 105 meV. |
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DOI: | 10.48550/arxiv.cond-mat/0609360 |