Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields

Physica E 34 (2006) 632-635 The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interprete...

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Bibliographic Details
Main Authors Smrčka, L, Vašek, P, Svoboda, P, Goncharuk, N. A, Pacherová, O, Krupko, Yu, Sheikin, Y
Format Journal Article
LanguageEnglish
Published 14.10.2005
Subjects
Physics - Mesoscale and Nanoscale Physics
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DOI10.48550/arxiv.cond-mat/0510387

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Summary:Physica E 34 (2006) 632-635 The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices.
DOI:10.48550/arxiv.cond-mat/0510387