de Haas-van Alphen effect investigation of the electronic structure of Al substituted MgB_2

Phys. Rev. B 72, 060507(R) (2005) We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $\sigma$ tube orbits i...

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Main Authors Carrington, A, Fletcher, J. D, Cooper, J. R, Taylor, O. J, Balicas, L, Zhigadlo, N. D, Kazakov, S. M, Karpinski, J, Charmant, J. P. H, Kortus, J
Format Journal Article
LanguageEnglish
Published 26.04.2005
Subjects
Physics - Superconductivity
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Summary:Phys. Rev. B 72, 060507(R) (2005) We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $\sigma$ tube orbits in the doped samples are lower than in pure MgB$_2$, implying a $16\pm2%$ reduction in the number of holes in this sheet of Fermi surface. The mass of the quasiparticles on the larger $\sigma$ orbit is lighter than the pure case indicating a reduction in electron-phonon coupling constant $\lambda$. These observations are compared with band structure calculations, and found to be in excellent agreement.
DOI:10.48550/arxiv.cond-mat/0504664