Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide

We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on doping configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating doping regime. In p...

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Bibliographic Details
Main Authors Duan, Xiangmei, Baroni, Stefano, Modesti, Silvio, Peressi, Maria
Format Journal Article
LanguageEnglish
Published 23.03.2005
Subjects
Physics - Materials Science
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Summary:We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on doping configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating doping regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic layers. The simulated cross-sectional scanning tunneling microscopy images show a bright signal at negative bias, which is strongly attenuated when the bias is reversed. This scenario is consistent with experimental results which had been attributed to hitherto unidentified Si complexes.
DOI:10.48550/arxiv.cond-mat/0503572