Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstit...

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Bibliographic Details
Main Authors Schwartz, Dana A, Gamelin, Daniel R
Format Journal Article
LanguageEnglish
Published 21.04.2004
Subjects
Physics - Materials Science
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Summary:The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices.
DOI:10.48550/arxiv.cond-mat/0404518