Interface-mediated pairing in field effect devices

Phys. Rev. B 71, 104510 (2005) We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a func...

Full description

Saved in:
Bibliographic Details
Main Authors Koerting, V, Yuan, Qingshan, Hirschfeld, P. J, Kopp, T, Mannhart, J
Format Journal Article
LanguageEnglish
Published 25.02.2004
Subjects
Physics - Strongly Correlated Electrons
Physics - Superconductivity
Online AccessGet full text

Cover

More Information
Summary:Phys. Rev. B 71, 104510 (2005) We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. $T_c$ is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.
DOI:10.48550/arxiv.cond-mat/0402624