Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the s...

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Main Authors Chen, Yi-Hsun, Lo, Ping-Yuan, Boschen, Kyle W, Peng, Guan-Hao, Huang, Chun-Jui, Holtzman, Luke N, Hsu, Chih-En, Hsu, Yung-Ning, Holbrook, Madisen, Wang, Wei-Hua, Barmak, Katayun, Hone, James, Hawrylak, Pawel, Hsueh, Hung-Chung, Davis, Jeffrey A, Cheng, Shun-Jen, Fuhrer, Michael S, Chen, Shao-Yu
Format Journal Article
LanguageEnglish
Published 05.09.2024
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Summary:In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light.
DOI:10.48550/arxiv.2409.03387