Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of autonomous vehicles through NIR imaging systems. Several technologic...
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Main Authors | , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
19.08.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Fast and accurate detection of light in the near-infrared (NIR) spectral
range plays a crucial role in modern society, from alleviating speed and
capacity bottlenecks in optical communications to enhancing the control and
safety of autonomous vehicles through NIR imaging systems. Several
technological platforms are currently under investigation to improve NIR
photodetection, aiming to surpass the performance of established III-V
semiconductor p-i-n (PIN) junction technology. These platforms include in
situ-grown inorganic nanocrystals and nanowire arrays, as well as hybrid
organic-inorganic materials such as graphene-perovskite heterostructures.
However, challenges remain in nanocrystal and nanowire growth, large-area
fabrication of high-quality 2D materials, and the fabrication of devices for
practical applications. Here, we explore the potential for tailored
semiconductor nanocrystals to enhance the responsivity of planar
metal-semiconductor-metal (MSM) photodetectors. MSM technology offers ease of
fabrication and fast response times compared to PIN detectors. We observe
enhancement of the optical-to-electric conversion efficiency by up to a factor
of ~2.5 through the application of plasmonically-active semiconductor nanorods
and nanocrystals. We present a protocol for synthesizing and rapidly testing
the performance of non-stoichiometric tungsten oxide (WO$_{3-x}$) nanorods and
cesium-doped tungsten oxide (Cs$_y$WO$_{3-x}$) hexagonal nanoprisms prepared in
colloidal suspensions and drop-cast onto photodetector surfaces. The results
demonstrate the potential for a cost-effective and scalable method exploiting
tailored nanocrystals to improve the performance of NIR optoelectronic devices. |
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DOI: | 10.48550/arxiv.2408.10389 |