Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures

• Main Authors: Sarkar, Soumya, Han, Zirun, Ghani, Maheera Abdul, Strkalj, Nives, Kim, Jung Ho, Wang, Yan, Jariwala, Deep, Chhowalla, Manish
• Format: Journal Article
• Language: English
• Published: 12.07.2024
• Subjects: Physics - Applied Physics; Physics - Materials Science
• DOI: 10.48550/arxiv.2407.09175

Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel non-volatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP2S6 (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10-nm-thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom electrodes, we achieve high electroresistance (on- and off-state resistance ratios) of ~10^6, on-state rectification ratios of ~2500 for read/write voltages of 2 V/0.5 V and maximum output current densities of 100 A/cm^2. These metrics compare favourably with state-of-the-art FeDs. Piezoresponse force microscopy measurements show that stabilization of intermediate net polarization states in CIPS leads to stable multi-bit data retention at room temperature. The combination of two-terminal design, multi-bit memory, and low-power operation in CIPS-based FeDs is potentially interesting for compute-in-memory and neuromorphic computing applications.