Amplified Spontaneous Emission and Random Lasing in MAPbBr$_3$ Halide Perovskite Single Crystals

• Main Authors: Murzin, A. O, Stroganov, B. V, Günnemann, C, Hammouda, S. B, Shurukhina, A. V, Lozhkin, M. S, Emeline, A. V, Kapitonov, Yu. V
• Format: Journal Article
• Language: English
• Published: 17.03.2020
• Subjects: Physics - Applied Physics; Physics - Mesoscale and Nanoscale Physics
• DOI: 10.48550/arxiv.2003.07927

Halide perovskites are a promising optical gain media with high tunability and simple solution synthesis. In this study, two gain regimes, namely amplified spontaneous emission and random lasing, are demonstrated in same MAPbBr$_3$ halide perovskite single crystal. For this, photoluminescence is measured at a temperature of 4 K with pulsed femtosecond pumping by UV light with a 80 MHz repetition rate. Random lasing is observed in areas of the sample where a random resonator was formed due to cracks and crystal imperfections. In more homogeneous regions of the sample, the dominant regime is amplified spontaneous emission. These two regimes are reliably distinguished by the line width, the mode structure, the growth of the intensity after the threshold, and the degree of polarization of the radiation. The spectral localization of the stimulated emission well below the bound exciton resonance raises a question concerning the origin of the emission in halide perovskite lasers.