Interfacial mechanism in the anomalous Hall effect of Co/Bi$_2$O$_3$ bilayers

Phys. Rev. B 100, 100407 (2019) Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evide...

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Bibliographic Details
Main Authors Sagasta, Edurne, Borge, Juan, Esteban, Luis, Omori, Yasutomo, Gradhand, Martin, Otani, YoshiChika, Hueso, Luis E, Casanova, Fèlix
Format Journal Article
LanguageEnglish
Published 03.04.2019
Subjects
Physics - Mesoscale and Nanoscale Physics
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Summary:Phys. Rev. B 100, 100407 (2019) Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi$_2$O$_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi$_2$O$_3$ capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi$_2$O$_3$ bilayers that originates from the Co/Bi$_2$O$_3$ interface and contributes to the skew scattering.
DOI:10.48550/arxiv.1904.01912