InGaN/GaN {\mu}LED SPICE modelling with size dependent ABC model integration
The need of high brightness micro-displays in portable applications dedicated to mixed and/or virtual reality has drawn an important research wave on InGaN/GaN based micro-sized light emitting diodes ({\mu}LEDs). We propose to use a SPICE modelling technique to describe and simulate the electro-opti...
Saved in:
| Main Authors | , |
|---|---|
| Format | Journal Article |
| Language | English |
| Published |
18.03.2019
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Summary: | The need of high brightness micro-displays in portable applications dedicated
to mixed and/or virtual reality has drawn an important research wave on
InGaN/GaN based micro-sized light emitting diodes ({\mu}LEDs). We propose to
use a SPICE modelling technique to describe and simulate the electro-optical
behavior of the {\mu}LED. A sub-circuit portrayal of the whole device will be
used to describe current-voltage behavior and the optical power performance of
the device based on the ABC model. We suggest an innovative method to derive
instantaneously the carrier concentration from the simulated electrical current
in order to determine the {\mu}LED quantum efficiency. In a second step, a
statistical approach is also added into the SPICE model in order to apprehend
the spread on experimental data. This {\mu}LED SPICE modelling approach is very
important to allow the design of robust pixel driving circuits. |
|---|---|
| DOI: | 10.48550/arxiv.1903.07538 |