Effect of annealing treatment on the structural, optical and magnetic properties of ZnSe thin films grown by spray pyrolysis
Many investigations and reviews show that II-VI compound semiconductor 1-D nanostructures have a great potential for the future electronic and optoelectronic applications. As an important II-VI semiconductor, ZnSe is one of the most significant materials with prominent applications in this issue. In...
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Main Authors | , |
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Format | Journal Article |
Language | English |
Published |
16.12.2018
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Subjects | |
Online Access | Get full text |
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Summary: | Many investigations and reviews show that II-VI compound semiconductor 1-D
nanostructures have a great potential for the future electronic and
optoelectronic applications. As an important II-VI semiconductor, ZnSe is one
of the most significant materials with prominent applications in this issue. In
the present work, we firstly provide a comprehensive investigation of the
magnetic properties like magnetization and magnetic susceptibility of ZnSe
nanostructures as a 1-D quantum many body. The magnetic study of this metal
reveals a ferromagnetic-antifferomagnetic transition upon cooling.
Magnetization shows a step-like behavior with pronounced plateaus in a specific
magnetic field interval at low temperature. This subject has not been
investigated in the previous works. In the experimental part, thin films of
ZnSe are deposited on glass substrates (at two different substrate temperature)
by the spray pyrolysis technique and annealed in vacuum at $400^\circ$C for 1
hour. Hereby, we investigate the morphology, structural and optical properties
of ZnSe thin films using field emission scanning electron microscope (FE-SEM),
X-ray diffraction (XRD) and UV-vis spectrophotometer measurements. XRD analysis
reveal that annealed films grown on glass substrate at $400^\circ$C are
polycrystalline in nature with cubic zincblene structure. By annealing, the
grains size, the diameter and density of the particles increase. The UV-vis
measurements display a red-shift of the absorption edge from the as-deposited
to annealed ZnSe thin films as compared to its value for the ZnSe thin films.
The band-gaps of the annealed samples are estimated about 2.71 eV, which are in
consistence with the band gap of ZnSe thin films. The average transmittance of
the annealed samples are over 80 $\%$ close to the infrared wavelength range. |
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DOI: | 10.48550/arxiv.1812.06549 |