Tuning the hybridization and magnetic ground state of electron and hole doped CeOs$_2$Al$_{10}$: an x-ray spectroscopy study

• Main Authors: Chen, Kai, Sundermann, Martin, Strigari, Fabio, Kawabata, Jo, Takabatake, Toshiro, Tanaka, Arata, Bencok, Peter, Choueikani, Fadi, Severing, Andrea
• Format: Journal Article
• Language: English
• Published: 23.01.2018
• Subjects: Physics - Strongly Correlated Electrons
• DOI: 10.48550/arxiv.1801.07622

Phys. Rev. B 97, 155106 (2018) Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce $M_{4,5}$ edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs$_2$Al$_{10}$. Both substitutions have a strong impact on the unusual high N$\acute{e}$el temperature, $T_N$=28.5\,K, and also the direction of the ordered moment in case of Ir. The substitution dependence of the linear dichroism is weak thus validating the crystal-field description of CeOs$_2$Al$_{10}$ being representative for the Re and Ir substituted compounds. The impact of electron- and hole-doping on the hybridization between conduction and 4$f$ electrons is related to the amount of $f^0$ in the ground state and reduction of x-ray magnetic circular dichroism. A relationship of $cf$-hybridization strength and enhanced $T_N$ is discussed. The direction and doping dependence of the circular dichroism is in agreement with strong Kondo screening along the crystallographic $a$ direction.