Tuning the hybridization and magnetic ground state of electron and hole doped CeOs$_2$Al$_{10}$: an x-ray spectroscopy study
Phys. Rev. B 97, 155106 (2018) Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce $M_{4,5}$ edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs$_2$Al$_{10}$. Both substitutions have a strong impact on the unusual high N$\acute{e}...
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Main Authors | , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
23.01.2018
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Subjects | |
Online Access | Get full text |
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Summary: | Phys. Rev. B 97, 155106 (2018) Here we present linear and circular polarized soft x-ray absorption
spectroscopy (XAS) data at the Ce $M_{4,5}$ edges of the electron (Ir) and
hole-doped (Re) Kondo semiconductor CeOs$_2$Al$_{10}$. Both substitutions have
a strong impact on the unusual high N$\acute{e}$el temperature, $T_N$=28.5\,K,
and also the direction of the ordered moment in case of Ir. The substitution
dependence of the linear dichroism is weak thus validating the crystal-field
description of CeOs$_2$Al$_{10}$ being representative for the Re and Ir
substituted compounds. The impact of electron- and hole-doping on the
hybridization between conduction and 4$f$ electrons is related to the amount of
$f^0$ in the ground state and reduction of x-ray magnetic circular dichroism. A
relationship of $cf$-hybridization strength and enhanced $T_N$ is discussed.
The direction and doping dependence of the circular dichroism is in agreement
with strong Kondo screening along the crystallographic $a$ direction. |
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DOI: | 10.48550/arxiv.1801.07622 |