Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS$_2

Phys. Rev. Lett. 120, 106802 (2018) We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dic...

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Bibliographic Details
Main Authors Wakamura, Taro, Reale, Francesco, Palczynski, Pawel, Guéron, Sophie, Mattevi, Cecilia, Bouchiat, Hélène
Format Journal Article
LanguageEnglish
Published 20.10.2017
Subjects
Physics - Mesoscale and Nanoscale Physics
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Summary:Phys. Rev. Lett. 120, 106802 (2018) We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy ($E_{\rm so}$) higher than 10 meV. The symmetry of the induced SOI is also discussed, and the dominant $z$ $\rightarrow$ $-z$ symmetric SOI can only explain the experimental results. Spin relaxation by the Elliot-Yafet (EY) mechanism and anomalous resistance increase with temperature close to the Dirac point indicates Kane-Mele (KM) SOI induced in graphene.
DOI:10.48550/arxiv.1710.07483