Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2

The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to di...

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Main Authors Čabo, Antonija Grubišić, Miwa, Jill A, Grønborg, Signe S, Riley, Jonathon M, Johannsen, Jens C, Cacho, Cephise, Alexander, Oliver, Chapman, Richard T, Springate, Emma, Grioni, Marco, Lauritsen, Jeppe V, King, Phil D. C, Hofmann, Philip, Ulstrup, Søren
Format Journal Article
LanguageEnglish
Published 28.08.2015
Subjects
Physics - Materials Science
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Summary:The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS$_2$. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
DOI:10.48550/arxiv.1508.07301