Isothermal Annealing of Shocked Zirconium: Stability of the Two-phase $\alpha/\omega$ Microstructure
T.S.E. Low, D.W. Brown, B.A. Welk, E.K. Cerreta, J.S. Okasinski, S.R. Niezgoda, Isothermal annealing of shocked zirconium: Stability of the two-phase microstructure, Acta Materialia, Volume 91, 1 June 2015, Pages 101-111 Under high pressure conditions, Zr undergoes a phase transformation from its am...
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Main Authors | , , , , , |
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Format | Journal Article |
Language | English |
Published |
12.11.2014
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Online Access | Get full text |
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Summary: | T.S.E. Low, D.W. Brown, B.A. Welk, E.K. Cerreta, J.S. Okasinski,
S.R. Niezgoda, Isothermal annealing of shocked zirconium: Stability of the
two-phase microstructure, Acta Materialia, Volume 91, 1 June 2015, Pages
101-111 Under high pressure conditions, Zr undergoes a phase transformation from its
ambient equilibrium hexagonal close packed $\alpha$ phase to hexagonal $\omega$
phase. Upon returning to ambient conditions, the material displays hysteretic
behavior, retaining a significant amount of metastable $\omega$ phase. This
study presents an in-situ synchrotron X-ray diffraction analysis of Zr samples
shock-loaded to compressive peak stresses of 8 and 10.5 GPa and then annealed
at temperatures of 443, 463, 483, and 503K. The evolution of the $\alpha$ phase
volume fraction was tracked quantitatively, and the dislocation densities in
both phases were tracked qualitatively during annealing. Upon heating, the
reverse transformation of $\omega\to\alpha$ does not go to completion, but
instead reaches a new metastable state. The initial rate of transformation is
faster at higher temperatures. Samples shock-loaded to higher peak pressures
experienced higher initial transformation rates and more extensive
transformation. Dislocation content in both phases was observed to be high in
the as-shocked samples. Annealing the samples reduces the dislocation content
in both phases, with the reduction being lesser in the $\omega$ phase, leading
to the postulation that transformation from $\omega\to\alpha$ is restricted by
the pinning effect of dislocation structures within the $\omega$ phase.
Electron backscatter diffraction analysis affirmed that the expected
$(0\;0\;0\;1)_\alpha\parallel(1\;0\;\overline{1}\;1)_\omega$ and
$[1\;0\;\overline{1}\;0]_\alpha\parallel[1\;1\;\overline{2}\;\overline{3}]_\omega$
orientation relationship is maintained during nucleation and growth of the
$\alpha$ phase during the annealing. \end{abstract} |
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DOI: | 10.48550/arxiv.1411.3298 |