Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/In x Ga1–x Sb Quantum Wells

Structure dependent differential tunneling conductance, dI/dV, profiles obtained using scanning tunneling microscopy on both (110)-cleaved surfaces and (001)-growth surfaces in InAs/GaSb and InAs/In x Ga1–x Sb quantum wells (QWs), which are platforms of two-dimensional topological insulator (2D-TI),...

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Bibliographic Details
Published inACS nano Vol. 13; no. 11; pp. 12980 - 12986
Main Authors Kaku, Shigeru, Ando, Tatsuhito, Yoshino, Junji
Format Journal Article
LanguageEnglish
Published American Chemical Society 26.11.2019
Subjects
electronic structure calculations
molecular beam epitaxy
topological insulators
quantum wells
edge states
scanning tunneling microscopy
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Summary:Structure dependent differential tunneling conductance, dI/dV, profiles obtained using scanning tunneling microscopy on both (110)-cleaved surfaces and (001)-growth surfaces in InAs/GaSb and InAs/In x Ga1–x Sb quantum wells (QWs), which are platforms of two-dimensional topological insulator (2D-TI), clearly demonstrated the edge states formed on the 2D-TI surfaces. The results were confirmed by kp-based electronic structure calculations, which demonstrated that the edge states extended to the 10 nm range from cleaved surfaces generated in the appropriately designed InAs/(In)­GaSb QW systems.
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.9b05611