Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

• Published in: Small science Vol. 4; no. 2
• Main Authors: Woo, Gunhoo, Cho, Jinill, Yeom, Heejung, Yoon, Min Young, Eom, Geon Woong, Kim, Muyoung, Mun, Jihun, Lee, Hyo Chang, Kim, Hyeong-U, Yoo, Hocheon, Kim, Taesung
• Format: Journal Article
• Language: English
• Published: 01.02.2024

Negative Differential Resistance Devices In article number 2300202, Taesung Kim and co‐workers present outstanding improvement in tunneling performance and achieve clear photoreactive NDR behavior via temperature‐based phase modification of TMD material. By using a metal layer sulfidation method, di...