Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

Negative Differential Resistance Devices In article number 2300202, Taesung Kim and co‐workers present outstanding improvement in tunneling performance and achieve clear photoreactive NDR behavior via temperature‐based phase modification of TMD material. By using a metal layer sulfidation method, di...

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Published inSmall science Vol. 4; no. 2
Main Authors Woo, Gunhoo, Cho, Jinill, Yeom, Heejung, Yoon, Min Young, Eom, Geon Woong, Kim, Muyoung, Mun, Jihun, Lee, Hyo Chang, Kim, Hyeong-U, Yoo, Hocheon, Kim, Taesung
Format Journal Article
LanguageEnglish
Published 01.02.2024
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Summary:Negative Differential Resistance Devices In article number 2300202, Taesung Kim and co‐workers present outstanding improvement in tunneling performance and achieve clear photoreactive NDR behavior via temperature‐based phase modification of TMD material. By using a metal layer sulfidation method, distorted 1T WS2 with 4‐inch wafer scale was successfully synthesized. The semi‐metal characteristics have been revealed via DFT calculation and materials characterization method. Lastly, the heterojunction with Si shows advanced tunneling performance under light irradiation situations and achieved functional RAM device application.
ISSN:2688-4046
2688-4046
DOI:10.1002/smsc.202470004