A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 (Adv. Phys. Res. 1/2025)

Room‐temperature ferromagnetism in diluted magnetic semiconductors Diluted magnetic semiconductors (DMS), which combine the advantages of carrier processes in semiconductors and spin storage in ferromagnets, have significant impacts on generating brand new information technologies. However, achievin...

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Published inAdvanced Physics Research Vol. 4; no. 1
Main Authors Peng, Yi, Li, Xiang, Shi, Luchuan, Zhao, Guoqiang, Zhang, Jun, Zhao, Jianfa, Wang, Xiancheng, Gu, Bo, Deng, Zheng, Uemura, Yasutomo J., Jin, Changqing
Format Journal Article
LanguageEnglish
Published 01.01.2025
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Summary:Room‐temperature ferromagnetism in diluted magnetic semiconductors Diluted magnetic semiconductors (DMS), which combine the advantages of carrier processes in semiconductors and spin storage in ferromagnets, have significant impacts on generating brand new information technologies. However, achieving room‐temperature ferromagnetism in a controllable mode for DMS is a major challenge. In article number 2400124, Bo Gu, Zheng Deng, Changqing Jin and co‐workers report experimental enhancement of TC to a record 260 K for the new‐generation DMS material (Ba,K)(Zn,Mn)2As2 (or “BZA”) through high‐pressure synthesis that effectively optimizes spin and charge doping.
ISSN:2751-1200
2751-1200
DOI:10.1002/apxr.202570001