Novel DNQ PACs for high-resolution i-line lithography

• Published in: Proceedings of SPIE Vol. 1672; no. 1; pp. 273 - 285
• Main Authors: Brunsvold, William R, Eib, Nicholas K, Lyons, Christopher F, Miura, Steve S, Plat, Marina V, Dammel, Ralph R, Evans, O. B, Rahman, M. D, Khanna, Dinesh N, Jain, Sangya, Lu, Ping-Hung, Ficner, Stanley A
• Format: Conference Proceeding
• Language: English
• Published: SPIE 01.06.1992
• ISBN: 0819408271; 9780819408273
• ISSN: 0277-786X
• DOI: 10.1117/12.59778

The use of i-line lithography for the 16 to 64 Mbit DRAM device generations calls for increased performance of i-line resists. This paper reports on investigations on novel sensitizers for advanced i-line lithography, starting out with a discussion of general design criteria, then discussing methodology and results of a screening phase, and examining in greater detail a small number of selected candidates for which resolution, exposure latitude, and depth-of-focus data were obtained. Finally, a new advanced resist for i-line lithography, AZR 7500, is presented, and its performance is evaluated in terms of the above criteria as well as thermal flow resistance.