Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric

• Published in: Advanced electronic materials Vol. 6; no. 7
• Main Authors: Jeon, Hyun Bae, Shin, Gwang Hyuk, Lee, Khang June, Choi, Sung‐Yool
• Format: Journal Article
• Language: English
• Published: 01.07.2020
• Subjects: heterostructures; ion gel dielectrics; MoS 2; tunneling transistors; WSe 2
• ISSN: 2199-160X; 2199-160X
• DOI: 10.1002/aelm.202000091

A p‐type tunneling field‐effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing the ion gel dielectric as top gate. Band‐to‐band tunneling is achieved by modulating the band alignment of the heterojunction of WSe2 and MoS2 with gating the WSe2 channel through ion gel top gate. A fabricated tunneling field‐effect transistor shows a minimum subthreshold swing of 36 mV dec−1 and ON/OFF current ratio of 106 at room temperature. Furthermore, evidence of band‐to‐band tunneling is clearly confirmed through temperature dependent I–V characteristics. This work holds considerable promise for the low‐power computational devices based on integrated circuits. A p‐type tunneling field‐effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing the ion gel dielectric as top gate. Band‐to‐band tunneling is achieved by modulating the band alignment of the heterojunction of WSe2 and MoS2 with gating the WSe2 channel through ion gel top gate.