High‐performance HfO2/ZrO2/IGZO thin‐film transistors deposited using atmospheric pressure plasma jet

• Published in: Electronics letters Vol. 50; no. 23; pp. 1747 - 1749
• Main Authors: Wu, Chien‐Hung, Chang, Kow‐Ming, Hsu, Hsin‐Yu
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 06.11.2014
• Subjects: APPJ deposition technology; APPJ IGZO film; APPJ indium–gallium–zinc‐oxide film; atmospheric pressure plasma jet deposition technology; channel material; ecofriendly water‐based metal salt solution; hafnium compounds; HfO2‐ZrO2; high‐k dielectric HfO2‐ZrO2 gate stack; high‐k dielectric thin films; IGZO‐based transparent thin‐film transistors; plasma deposition; plasma jets; semiconductor thin films; TFT; thin film transistors; TOS film; transparent oxide semiconductors film; voltage 0.63 V; zirconium compounds
• ISSN: 1350-911X; 1350-911X
• DOI: 10.1049/el.2014.1823

An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco‐friendly water‐based metal salt solution as a precursor is presented. Through the use of APPJ indium–gallium–zinc‐oxide (IGZO) film as the channel material and a high‐k dielectric HfO2/ZrO2 gate stack, IGZO‐based transparent thin‐film transistors (TFTs) were fabricated and characterised. The HfO2/ZrO2/IGZO‐TFTs by APPJ demonstrated excellent electrical characteristics, including a low Vth of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm2/V‐s and a large Ion/Ioff ratio of 7 × 108.