Photoconductivity of the narrow-gap Pb1 − xSnxTe(In) semiconductors in the terahertz spectral range

The spectral dependence of photoconductivity in the doped narrow-gap semiconductor Pb 0.75 Sn 0.25 Te(In) under the action of terahertz laser radiation pulses has been studied at temperatures 4.2–30 K. It is shown that the photoconductivity spectrum of the semiconductor spreads at least up to the wa...

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Published inJETP letters Vol. 91; no. 1; pp. 35 - 37
Main Authors Galeeva, A. V., Ryabova, L. I., Nikorich, A. V., Ganichev, S. D., Danilov, S. N., Bel’kov, V. V., Khokhlov, D. R.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.01.2010
Subjects
Atomic
Biological and Medical Physics
Biophysics
Condensed Matter
Molecular
Optical and Plasma Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Information Technology
Solid State Physics
Spintronics
JETP Letter
Conduction Band Edge
Lead Telluride
Photoconductivity Spectrum
Photo Conductivity
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Summary:The spectral dependence of photoconductivity in the doped narrow-gap semiconductor Pb 0.75 Sn 0.25 Te(In) under the action of terahertz laser radiation pulses has been studied at temperatures 4.2–30 K. It is shown that the photoconductivity spectrum of the semiconductor spreads at least up to the wavelength of 500 μm. This value is more than twice higher than the red cutoff wavelength of 220 μm in uniaxially stressed Ge(Ga) which is known as the most long-wavelength photodetector among sensitive photon detectors of radiation. Mechanisms responsible for photosensitivity of PbSnTe(In) in the terahertz spectral range are discussed.
ISSN:0021-3640
1090-6487
DOI:10.1134/S002136401001008X