Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications

Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate lengths have been developed at Fraunhofer IAF for operation in the millimeter-wave frequency range up to 600 GHz. Based on these technologies, a variety of multifunctional millimeter-wave and submillimete...

Full description

Saved in:
Bibliographic Details
Published inFuture Security pp. 200 - 211
Main Authors Schlechtweg, Michael, Tessmann, Axel, Hülsmann, Axel, Kallfass, Ingmar, Leuther, Arnulf, Aidam, Rolf, Zech, Christian, Lewark, Ulrich J., Massler, Hermann, Riessle, Markus, Zink, Martin, Rosenzweig, Josef, Ambacher, Oliver
Format Book Chapter
LanguageEnglish
Published Berlin, Heidelberg Springer Berlin Heidelberg 2012
SeriesCommunications in Computer and Information Science
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate lengths have been developed at Fraunhofer IAF for operation in the millimeter-wave frequency range up to 600 GHz. Based on these technologies, a variety of multifunctional millimeter-wave and submillimeter-wave monolithic integrated circuits (MMICs and S MMICs) has been realized. To demonstrate the potential of these technologies, this paper presents some examples of S-MMICs developed for use in next generation systems for safety and security applications: a 460 GHz amplifier and a 300 GHz heterodyne receiver. Furthermore, a complete 94 GHz imaging system for materials testing and concealed object detection is presented.
ISBN:9783642331602
3642331602
ISSN:1865-0929
1865-0937
DOI:10.1007/978-3-642-33161-9_30