RF plasma chemical vapor deposition of SiNx:H films

This paper reports on the growth of hydrogenated silicon nitride films by plasma enhanced chemical vapor deposition in the temperature range 100–200°C. We examine the effect of deposition parameters on the growth kinetics, composition, and properties of the films and describe examples of the use of...

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Bibliographic Details
Published inInorganic materials Vol. 48; no. 8; pp. 808 - 812
Main Authors Semenova, O. I., Devyatova, S. F.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.08.2012
Subjects
Chemistry
Chemistry and Materials Science
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Silicon Nitride
Plasma Power
Plasma Enhance Chemical Vapor Deposition
Flow Rate Ratio
Antireflection Coating
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Summary:This paper reports on the growth of hydrogenated silicon nitride films by plasma enhanced chemical vapor deposition in the temperature range 100–200°C. We examine the effect of deposition parameters on the growth kinetics, composition, and properties of the films and describe examples of the use of such films in the fabrication of uncooled IR photodetectors, antireflection coatings of solar cells, and three-dimensional microsystems.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168512070151